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| HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS ID25 RDS(on) 1.05 1.20 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr 250 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Symbol Test Conditions 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, Pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C 12N100 10N100 12N100 10N100 12N100 10N100 Maximum Ratings 1000 1000 20 30 10 9 48 40 12 10 31 1 5 250 -40 ... +150 150 -40 ... +150 300 2500 5 V V V V A A A A A A mJ J V/ns W C C C C V~ g ISOPLUS 247TM (IXFR) G (TAB) D Isolated back surface* G = Gate S = Source D = Drain TAB = Drain Features RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers 13.5 MHz industrial applications Pulse generation Laser drivers RF amplifiers Advantages ISOPLUS 247TM package for clip or spring mounting Space savings High power density 98934(7/02) Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 3.0 V 5.5 V 100 nA TJ = 25C TJ = 125C 12N100 10N100 50 A 1.5 mA 1.05 1.2 VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 4mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 1 & 2 (c) 2002 IXYS All rights reserved IXFR 10N100F IXFR 12N100F Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 8 12 2700 VGS = 0 V, VDS = 25 V, f = 1 MHz 305 93 12 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT RG = 2 (External) 9.8 31 12 77 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT 16 42 0.50 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) PLUS 247TM Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = IT Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 12 48 1.5 250 A A V ns C A Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IF = 25 A,-di/dt = 100 A/s, VR = 100 V 0.8 7 Note: 1. Pulse test, t 300 s, duty cycle d 2 % 2. IT test current: IXFR10N100 IT = 5A IXFR12N100 IT = 6A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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